IEC 63601-2026 Guideline for evaluating bias temperature instability of silicon carbide metal- oxide-semiconductor devices for power electronic conversion

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IEC 63601

Edition 1.0 2026-02

INTERNATIONAL

STANDARD

Guideline for evaluating bias temperature instability of silicon carbide metal-

oxide-semiconductor devices for power electronic conversion

ICS 31.080.30 ISBN 978-2-8327-1019-7

IEC

63601

:2026

02(en

THIS PUBLICATION

IS COPYRIGHT PROTECTED

IEC,Geneva,Switzerland

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IEC 63601:2026 C IEC 2026

CONTENTS

FOREWORD........................................................................................................................................... 3

INTRODUCTION...................................................................................................................................... 5

1 Scope

................................................................................................................................................. 6

2 Normative reference........................................................................................................................ 6

3 Terms and definition......................................................................................................................... 6

4 Considerations for bias-temperature instability(BTI) stress methods and shift

evaluation for SiC-based MOS devices....................................................................................... 1

4.1 Genera.................................................................................................................................. 1

4.2 Mechanisms of VT shift and hysteresis resulting from PBTI/NBTI stres.....................12

4.3 Threshold voltage and hysteresis measurement.............................................................. 12

4.3.1 Comments concerning threshold voltage(VT) measurement.................................. 12

4.3.2 VT measurement and conditioning........................................................................... 15

4.3.3 Threshold hysteresis(V-HYST) and fast transient effects................................... 16

4.4 Typical PBTI/NBTI stress consideration........................................................................... 17

4.5 Lifetime prediction models and failure determination....................................................... 18

4.6 Overview of BTI methods ................................................................................................... 20

5 General Measure Stress Measure(MSM) method................................................................... 21

6 Fast Drain Current(FDC) method............................................................................................... 23

7 Gate sweep MSM method............................................................................................................. 24

8 Conditioning Method..................................................................................................................... 26

9 Hysteresis method (or double sense method)........................................................................... 27

10 Triple sense method...................................................................................................................... 28

Annex A(informative) Supplemental sampling guidelines............................................................... 30

Annex B(informative) Examples demonstrating VT shift during BTI measurement................... 31

B.1 General..................................................................................................................................31

B.2 Single VT sense measurement........................................................................................... 31

B.3 Double VT sense measurements(hysteresis method)................................................... 33

B.4 Triple VT sense measurements(VT sense + hysteresis)............................................... 35

Annex C(informative) Examples demonstrating VT shift during gate switching..........................37

Annex D (informative) Lifetime models............................................................................................. 39

Annex E(informative) General introduction to threshold voltage (VT) stability and SiC-

based MOSdevices ............................................................................................................................... 41

Bibliography

............................................................................................................................................. 43

Figure 1- Proposed sweep methods for NBTI and PBTI for MOSFET......................................... 14

Figure 2- Proposed sweep methods for NBTI and PBTI for gated diode configuration.............. 14

Figure 3- Circuit diagram for the VT measurement using the gated-diode configuration............. 15

Figure 4-Sweep proposal and ID vs VGs response for the fixed VGs method..........................15

Figure 5- Hysteresis measurement sequence, measuring VT using the gated diode VT

sensemethod......................................................................................................................................... 16

Figure 6- Hysteresis measurement sequence using gate sweeps..................................................17

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标签： #IEC #2026

摘要：

IEC63601REdition1.02026-02INTERNATIONALSTANDARDGuidelineforevaluatingbiastemperatureinstabilityofsiliconcarbidemetal-oxide-semiconductordevicesforpowerelectronicconversionICS31.080.30ISBN978-2-8327-1019-7IEC63601:2026-02(enTHISPUBLICATIONCopyright◎2026ISCOPYRIGHTPROTECTEDIEC,Geneva,SwitzerlandAllrig...

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